ABSTRACT

This paper presents an analytical model Inverter based on the theory of
single electron transistor(SET).The proposed design is very flexible such that it can be
used for single gate, multi-gate, symmetric, asymmetric devices and most importantly
it can also consider the effect of background charge. It can also be used for large
voltage range of drain-source voltage irrespective of the bias conditions. The
proposed design has been simulated with SPICE and the characteristics produced by
the proposed design have been verified against Monte Carlo simulator SIMON.
Index Terms: Coulomb Blockade, Monte Carlo Simulator SIMON, Single-Electron
Transistor
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